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TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 1 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ?? frequency range: 13.75 - 15.35 ghz ?? saturated output power: 44 dbm ?? power-added efficiency: 30% ?? small signal gain: 32 db ?? bias: vd = 25 v, idq = 1a, vg = -3.4v typical the triquint TGA2579-FL is a packaged ku-band power amplifier fabricated on triquint?s production- released, 0.25um gan on sic process. operating from 13.75 to 15.35 ghz, the TGA2579-FL typically provides 44 dbm of saturated output power, 30% power-added efficiency and 32db of small signal gain. the TGA2579-FL features low loss ground-signal- ground (gsg) rf transitions designed to interface with a coplanar waveguide multilayer board. ideally suited for ku-band communications, the TGA2579-FL supports key commercial and de- fense-related frequency bands. triquint?s 0.25um gan on sic process offers su- perior electrical performance through ku-band while maintaining high reliability. in addition, the use of sic substrates provides optimum thermal performance necessary for high power operation. lead-free and rohs compliant. applications product features general description functional block diagram pin configuration ordering information pin # symbol 1 vd 2,6 vg 3,5,10,12 gnd 4 rf in 7 vd 8 vd 11 rf out 9 vdet 13 n/c 14 vd part no. description TGA2579-FL ku-band power amplifier eccn 3a001.b.2.b ?? ku-band communications
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 2 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? absolute maximum ratings parameter rating drain to gate voltage, vd - vg 80 v drain voltage,vd 40 v gate voltage,vg -10 to 0 v drain current, id 4.5 a gate current, ig -18 to 18 ma rf input power, cw, 50 ? ,t = 25oc 27 dbm channel temperature, tch 275 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c operation of this device out side the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter min typ max units vd 25 v idq (no rf drive) 1.0 a id_drive (under rf drive) 3.5 a vg -3.4 v electrical specifications ar e measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions electrical specifications parameter min typ max units operational frequency range 13.75 15.35 ghz small signal gain 32 db output power @ saturation 44 dbm output toi 48 dbm gain temperature coefficient -0.07 db/c power temperature coefficient -0.007 db/c power-added efficiency @ saturation 30 % specifications test conditions unless otherwise noted: 25oc, vd = 25 v, cw, idq = 1a, vg = -3.4 v typical .
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 3 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? thermal and reliability information parameter condition rating channel temperature (tch), median lifetime (tm) , thermal resistance*, no rf drive tbase = 85 c, vd = 25 v, idq = 1a, pdiss = 25 w , cw tch = 117 c tm = 1.6e+9 hours jc = 1.3 c/w channel temperature (tch), median lifetime (tm) , thermal resistance*, under rf drive tbase = 85 c, vd = 25 v, id = 3.1a, pout = 44 dbm, pdiss = 49w, cw tch = 142 c tm = 1.4e+8 hours jc = 1.2 c/w specifications (cont?d)
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 4 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 40 42 44 46 48 50 13.5 14 14.5 15 15.5 saturated output power (dbm) frequency (ghz) saturated output power vs. frequency vd=25v, idq=1a, vg=-3.4 typ, cw, pin=24dbm -40 o c 25 o c 85 o c 20 25 30 35 40 45 50 13.5 14 14.5 15 15.5 power-added efficiency (%) frequency (ghz) power-added efficiency vs. frequency vd=25v, idq=1a, vg=-3.4v typ, cw, pin=24dbm -40 o c 25 o c 85 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 15 20 25 30 35 40 45 50 05101520 output power (dbm) and gain (db) input power (dbm) output power, gain, id vs. input power vd=25v, idq=1a, vg=-3.4v typ, 13.5ghz, t=25 o c, cw output power gain id id (a) 23 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 15 20 25 30 35 40 45 50 0 5 10 15 20 output power (dbm) and gain (db) input power (dbm) output power, gain, id vs. input power vd=25v, idq=1a, vg=-3.4v typ, 14.4ghz, t=25 o c, cw output power gain id id (a) 23 20 25 30 35 40 13.5 14 14.5 15 15.5 gain (db) frequency (ghz) gain vs. frequency vd=25v, idq=1a, vg=-3.4v typ, pin=0dbm, t=25 o c, cw -30 -25 -20 -15 -10 -5 0 13.5 14 14.5 15 15.5 irl and orl (db) frequency (ghz) return loss vs. frequency vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw irl orl
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 5 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 15 20 25 30 35 40 45 50 0 5 10 15 20 output power (dbm) and gain (db) input power (dbm) output power, gain, id vs. input power vd=25v, idq=1a, vg=-3.4v typ, 15.5ghz, t=25 o c, cw output power gain id id (a) 23 25 30 35 40 45 0 5 10 15 20 25 output power (dbm) input power (dbm) output power vs. input power vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw 13.5 ghz 14.4 ghz 15.5 ghz 15 20 25 30 35 0 5 10 15 20 25 gain (db) input power (dbm) gain vs. input power vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw 13.5 ghz 14.4 ghz 15.5 ghz 0.0 1.0 2.0 3.0 4.0 0 5 10 15 20 25 id (a) input power (dbm) id vs. input power vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw 13.5 ghz 14.4 ghz 15.5 ghz 0 10 20 30 40 50 5 10152025 pae (%) input power (dbm) pae vs. input power vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw 13.5 ghz 14.4 ghz 15.5 ghz
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 6 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 44 46 48 50 52 30 32 34 36 38 40 42 output toi (dbm) output power (dbm/tone) output toi vs. output power/tone vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw 13.75 ghz 14.5 ghz 15.35 ghz -35 -30 -25 -20 -15 -10 30 32 34 36 38 40 42 im3 (dbm) output power (dbm/tone) im3 vs. output power/tone vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw 13.75 ghz 14.5 ghz 15.35 ghz 0 1 2 3 4 5 32 34 36 38 40 42 44 vdet (v) output power (dbm) vdet vs. output power vd=25v, idq=1a, vg=-3.4v typ, t=25 o c, cw 13.5 ghz 14.4 ghz 15.5 ghz
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 7 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? bias-up procedure bias-down procedure turn vg to ?5 v turn off rf signal turn vd (all pins) to 25 v reduce vg to ?5 v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 1.0 a. this will be vg ~ -3.4 v typical turn vd (all pins) to 0 v apply rf signal turn vg to 0 v application circuit 1 2 3 4 5 6 78 9 10 11 12 13 14 vd TGA2579-FL rf in vd c11 1000 pf [note 1] c5 1 uf [note 1] c8 1000 pf [note 1] c2 1 uf [note 1] rf out n/c vdet vd vd c3 1 uf [note 1] c9 1000 pf [note 1] c6 1 uf [note 1] c12 1000 pf [note 1] note 1: remove cap for pulsed drain operation vg c7 1000 pf c1 1 uf vg c10 1000 pf c4 1 uf
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 8 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? pin # description 1 top side 1 st and 2 nd stage drain voltage. bias network is required; all drain voltage pins must be connected and bi ased; see application circuit on page 7 as an example. 2,6 gate voltage. bias network is r equired; both top and bottom sides must be connected and biased; see applicati on circuit on page 7 as an example. 3,5,10,12 connect to ground; see application circuit on page 7 as an example 4 input, matched to 50 ohms symbol vd vg gnd rf in 8 vd bottom side 3 rd stage drain voltage. bias network is required; all drain volt- age pins must be connected and biased; see application circuit on page 7 as an example. 13 n/c no internal connection, may be left open. 7 vd bottom side 1 st and 2 nd stage drain voltage. bias network is required; all drain voltage pins must be connected and bi ased; see application circuit on page 7 as an example. 11 rf out output, matched to 50 ohms 9 vdet vdetect; see application circuit on page 7 as an example. 14 vd top side 3 rd stage drain voltage. bias networ k is required; all drain voltage pins must be connected and biased; see application circuit on page 7 as an example. pin description
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 9 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? bill of material ref des value description manufacturer part number c1-6 1 uf cap, 1206, 50v, 10%, xr7 kemet c1206c105k5ractu c7-12 0.1 uf cap, 0603, 50v, 10%, xr7 kemet c0603c104k5ractu evaluation board layout c1 c2 c7 c8 gnd vg gnd TGA2579-FL yyww zzz mxxx c3 c4 c5 c6 c9 c10 c11 c12 vd vg gnd gnd vd vd vd vdet
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 10 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information unit: millimeters part marking: yy assembly lot start year ww assembly lot start week zzz part serial number mxxx batch id 11.379 2.946 4.216 4.724 5.994 7.264 8.534 9.296 11.074 12.344 17.323 3.175 10x 0.203 2.565 0.635 1.067 1.943 0.254 x10 0.762 x4 2.997 pin #1 indicators 1.600 x4 1.346 x4 90.0 x10
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 11 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? esd information esd rating: tbd value: passes > tbd v min. test: human body model (hbm) standard: jedec standard jesd22-a114 eccn us department of state: 3a001.b.2.b solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain haz- ardous substances in electrical and electronic equipment). this product also has the following attributes: ?? lead free ?? halogen free (chlorine, bromine) ?? antimony free ?? tbbp-a (c 15 h 12 br 4 0 2 ) free ?? pfos free 1. clean the board or module with alcohol. allow it to fully dry 2. nylock screws are recommended for mounting the TGA2579-FL to the board 3. to improve the thermal and rf performance, we recommend a heat sink attached to the bottom of the board and/or apply thermal compound to the bottom of the TGA2579-FL 4. apply solder to each pin of the TGA2579-FL. 5. clean the assembly with alcohol. product compliance information assembly notes
TGA2579-FL 25 watt ku-band gan power amplifier preliminary data sheet: 1/8/2013 - 12 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product informati on, worldwide sales and distribution locations, and infor- mation about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-products@tqs.com fax: +1.972.994.8504 for technical questions and application information: important notice the information contained herein is believed to be reliabl e. triquint makes no warranties regarding the infor- mation contained herein. triquint assumes no responsibilit y or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information con- tained herein. the information contained herein is provided "as is, where is" and with all faults, and the en- tire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such informat ion does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in m edical, life-saving, or life- sustaining applications, or other applications where a failure would reasonably be expected to cause severe per- sonal injury or death.

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